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data brief for further information contact your local stmicroelectronics sales office. august 2009 doc id 15851 rev 1 1/20 20 stm32w108hb stm32w108cb high-performance, 802.15.4 wireless system-on-chip features complete system-on-chip ? 32-bit arm? cortex?-m3 processor ? 2.4 ghz ieee 802.15.4 transceiver & lower mac ? 128-kbyte flash, 8-kbyte ram memory ? aes128 encryption accelerator ? flexible adc, spi/uart/twi serial communications, and general-purpose timers ? 24 highly configurable gpios with schmitt trigger inputs industry-leading arm? cortex?-m3 processor ? leading 32-bit processing performance ? highly efficient thumb?-2 instruction set ? operation at 6, 12 or 24 mhz ? flexible nested vectored interrupt controller low power consumption, advanced management ? rx current (w/ cpu): 27 ma ? tx current (w/ cpu, +3 dbm tx): 31 ma ? low deep sleep current, with retained ram and gpio: 400 na/800 na with/without sleep timer ? low-frequency internal rc oscillator for low-power sleep timing ? high-frequency internal rc oscillator for fast (100 s) processor start-up from sleep exceptional rf performance ? normal mode link budget up to 102 db; configurable up to 107 db ? -99 dbm normal rx sensitivity; configurable to -100 dbm (1% per, 20 byte packet) ? +3 db normal mode output power; configurable up to +7 dbm ? robust wifi and bluetooth coexistence innovative network and processor debug ? non-intrusive hardware packet trace ? serial wire/jtag interface ? standard arm debug capabilities: flash patch & breakpoint; data watchpoint & trace; instrumentation trace macrocell application flexibility ? single voltage operation: 2.1-3.6 v with internal 1.8 v and 1.25 v regulators ? optional 32.768 khz crystal for higher timer accuracy ? low external component count with single 24 mhz crystal ? support for external power amplifier ? small 7x7 mm 48-pin qfn package or 6x6 mm 40-pin qfn package applications smart energy building automation and control home automation and control security and monitoring zigbee? pro wireless sensor networking rf4ce products and remote controls 6lowpan and custom protocols table 1. device summary feature stm32w108hb stm32w108cb package 40-pin qfn 48-pin qfn vfqfpn48 vfqfpn40 (6 x 6 mm) (7 x 7 mm) www.st.com
description stm32w108cb, stm32w108hb 2/20 doc id 15851 rev 1 1 description the stm32w is a fully integrated system-on-chip that integrates a 2.4 ghz, ieee 802.15.4-compliant transceiver, 32-bit arm? cortex?-m3 microprocessor, flash and ram memory, and peripherals of use to designers of zigbee-based systems. the transceiver utilizes an efficient architecture that exceeds the dynamic range requirements imposed by the ieee 802.15.4-2003 standard by over 15 db. the integrated receive channel filtering allows for robust co-existence with other communication standards in the 2.4 ghz spectrum, such as ieee 802.11 and bluetooth. the integrated regulator, vco, loop filter, and power amplifier keep the external component count low. an optional high performance radio mode (boost mode) is software-selectable to boost dynamic range. the integrated 32-bit arm? cortex?-m3 microprocessor is highly optimized for high performance, low power consumption, and efficient memory utilization. including an integrated mpu, it supports two different modes of operation: system mode and application mode. the networking stack software runs in system mode with full access to all areas of the chip. application code runs in application mode with limited access to the stm32w resources; this allows for the scheduling of events by the application developer while preventing modification of restricted areas of memory and registers. this architecture results in increased stability and reliability of deployed solutions. the stm32w has 128 kbytes of embedded flash memory and 8 kbytes of integrated ram for data and program storage. the stm32w hal software employs an effective wear- leveling algorithm that optimizes the lifetime of the embedded flash. to maintain the strict timing requirements imposed by the zigbee and ieee 802.15.4-2003 standards, the stm32w integrates a number of mac functions into the hardware. the mac hardware handles automatic ack transmission and reception, automatic backoff delay, and clear channel assessment for transmission, as well as automatic filtering of received packets. a packet trace interface is also integrated with the mac, allowing complete, non- intrusive capture of all packets to and from the stm32w. the stm32w offers a number of advanced power management features that enable long battery life. a high-frequency internal rc oscillator allows the processor core to begin code execution quickly upon waking. various deep sleep modes are available with less than 1 a power consumption while retaining ram contents. to support user-defined applications, on- chip peripherals include uart, spi, twi, adc and general-purpose timers, as well as up to 24 gpios. additionally, an integrated voltage regulator, power-on-reset circuit, and sleep timer are available. 1.1 development tools finally, the stm32w utilizes standard serial wire and jtag interfaces for powerful software debugging and programming of the arm cortex-m3 core. the stm32w integrates the standard arm system debug components: flash patch and breakpoint (fpb), data watchpoint and trace (dwt), and instrumentation trace macrocell (dwt).
stm32w108cb, stm32w108hb description doc id 15851 rev 1 3/20 figure 1. stm32w block diagram packet sniffer adc rf_p,n program flash 128 kbytes data sram 8 kbytes hf crystal osc lf crystal osc general purpose adc serial wire and jtag debug internal lf rc-osc gpio multiplexor swtich chip manage r regulator bias 2 nd level interrupt controller rf_tx_alt_p,n osca oscb pa[7:0], pb[7:0], pc[7:0] encryption acclerator if always powered domain arm cortex-m3 ? cpu with nvic and mpu vreg_out watchdog pa select lna pa pa dac mac + baseband sleep timer bias_r por nreset general purpose timers gpio registers uart/ spi/twi synth internal hf rc-osc tx_active swclk, jtck calibration adc packet trace cpu debug tpiu/itm/ fpb/dwt ai15250
electrical characteristics stm32w108cb, stm32w108hb 4/20 doc id 15851 rev 1 2 electrical characteristics 2.1 parameter conditions unless otherwise specified, all voltages are referenced to v ss . 2.1.1 minimum and maximum values unless otherwise specified the minimum and maximum values are guaranteed in the worst conditions of ambient temperature, supply voltage and frequencies by tests in production on 100% of the devices with an ambient temperature at t a = 25 c and t a = t a max (given by the selected temperature range). data based on characterization results, design simulation and/or technology characteristics are indicated in the table footnotes and are not tested in production. based on characterization, the minimum and maximum values refer to sample tests and represent the mean value plus or minus three times the standard deviation (mean 3 ). 2.1.2 typical values unless otherwise specified, typical data are based on t a = 25 c, v dd = 3.3 v (for the 2v v dd 3.6 v voltage range). they are given only as design guidelines and are not tested. typical adc accuracy values are determined by characterization of a batch of samples from a standard diffusion lot over the full temperature range, where 95% of the devices have an error less than or equal to the value indicated (mean 2 ) . 2.1.3 typical curves unless otherwise specified, all typical curves are given only as design guidelines and are not tested. 2.1.4 loading capacitor the loading conditions used for pin parameter measurement are shown in figure 2 . 2.1.5 pin input voltage the input voltage measurement on a pin of the device is described in figure 3 . figure 2. pin loading conditions figure 3. pin input voltage stm32w c = 50 pf stm32w v in
stm32w108cb, stm32w108hb electrical characteristics doc id 15851 rev 1 5/20 2.2 absolute maximum ratings stresses above the absolute maximum ratings listed in table 2: voltage characteristics , table 3: current characteristics , and table 4: thermal characteristics may cause permanent damage to the device. these are stress ratings only and functional operation of the device at these conditions is not implied. exposure to maximum rating conditions for extended periods may affect device reliability. table 2. voltage characteristics ratings min. max. unit regulator input voltage (vdd_pads) -0.3 +3.6 v analog, memory and core voltage (vdd_24mhz, vdd_vco, vdd_rf, vdd_if, vdd_padsa, vdd_mem, vdd_pre, vdd_synth, vdd_core) -0.3 +2.0 v voltage on rf_p,n; rf_tx_alt_p,n -0.3 +3.6 v rf input power (for max level for correct packet reception see table 11: receive characteristics ) rx signal into a lossless balun +15 dbm voltage on any gpio (pa[7:0], pb[7:0], pc[7:0]), swclk, nreset, vreg_out -0.3 vdd_pads +0.3 v voltage on bias_r, osca, oscb -0.3 vdd_padsa +0.3 v table 3. current characteristics symbol ratings max. unit i vdd total current into v dd /v dda power lines (source) 150 ma i vss total current out of v ss ground lines (sink) 150 i io output current sunk by any i/o and control pin 25 output current source by any i/os and control pin ? 25 i inj(pin) injected current on nrst pin 5 injected current on hse osc_in and lse osc_in pins 5 injected current on any other pin 5 i inj(pin) total injected current (sum of all i/o and control pins) 25 table 4. thermal characteristics symbol ratings value unit t stg storage temperature range ?40 to +140 c t j maximum junction temperature 150 c
electrical characteristics stm32w108cb, stm32w108hb 6/20 doc id 15851 rev 1 2.3 operating conditions 2.3.1 general ope rating conditions 2.3.2 absolute maximum ratings (electrical sensitivity) based on three different tests (esd, lu) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. electrostatic discharge (esd) electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. the sample size depends on the number of supply pins in the device (3 parts (n+1) supply pins). this test conforms to the jesd22-a114/c101 standard. table 5. general operating conditions symbol parameter conditions min. typ. max. unit ? regulator input voltage (vdd_pads) 2.1 3.6 v ? analog and memory input voltage (vdd_24mhz, vdd_vco, vdd_rf, vdd_if, vdd_padsa, vdd_mem, vdd_pre, vdd_synth) 1.7 1.8 1.9 v ? core input voltage (vdd_core) 1.18 1.25 1.32 v ? operating temperature range -40 +85 c f hclk internal ahb clock frequency 0 72 mhz f pclk1 internal apb1 clock frequency 0 36 f pclk2 internal apb2 clock frequency 0 72 v dd standard operating voltage 2 3.6 v v dda analog operating voltage (adc not used) must be the same potential as v dd 23.6 v analog operating voltage (adc used) 2.4 3.6 v bat backup operating voltage 1.8 3.6 v t a ambient temperature for 6 suffix version maximum power dissipation ?40 85 c low power dissipation ?40 105 ambient temperature for 7 suffix version maximum power dissipation ?40 105 c low power dissipation ?40 125 t j junction temperature range 6 suffix version ?40 105 c 7 suffix version ?40 125
stm32w108cb, stm32w108hb electrical characteristics doc id 15851 rev 1 7/20 static latch-up two complementary static tests are required on six parts to assess the latch-up performance: a supply overvoltage is applied to each power supply pin a current injection is applied to each input, output and configurable i/o pin these tests are compliant with eia/jesd 78a ic latch-up standard. 2.4 dc electrical characteristics table 6. esd absolute maximum ratings symbol ratings conditions class maximum value (1) 1. based on characterization results, not tested in production. unit v esd(hbm) electrostatic discharge voltage (human body model) t a = +25 c conforming to jesd22-a114 2 2000 v v esd(cdm) electrostatic discharge voltage (charge device model) for non-rf pins t a = +25 c conforming to jesd22-c101 ii 400 electrostatic discharge voltage (charge device model)for rf pins 225 msl moisture sensitivity level msl3 ? table 7. electrical sensitivities symbol parameter conditions class lu static latch-up class t a = +105 c conforming to jesd78a ii level a table 8. dc electrical characteristics parameter conditions min. typ. max. unit regulator input voltage (vdd_pads) 2.1 3.6 v power supply range (vdd_mem) regulator output or external input 1.7 1.8 1.9 v power supply range (vdd_core) regulator output 1.18 1.25 1.32 v deep sleep current quiescent current, internal rc oscillator disabled -40c, vdd_pads = 3.6 v 0.4 a +25c, vdd_pads = 3.6 v 0.4 a +85c, vdd_pads = 3.6 v 0.6 a
electrical characteristics stm32w108cb, stm32w108hb 8/20 doc id 15851 rev 1 quiescent current, including internal rc oscillator -40c, vdd_pads=3.6 v 0.7 a +25c, vdd_pads=3.6 v 0.8 a +85c, vdd_pads=3.6 v 1.2 a quiescent current, including 32.768 khz oscillator -40c, vdd_pads=3.6v 1.2 a +25c, vdd_pads=3.6 v 1.3 a +85c, vdd_pads=3.6 v 1.7 a quiescent current, including internal rc oscillator and 32.768 khz oscillator -40c, vdd_pads=3.6v 1.4 a +25c, vdd_pads=3.6v 1.5 a +85c, vdd_pads=3.6 v 2.0 a simulated deep sleep (debug mode) current with no debugger activity 200 a reset current quiescent current, nreset asserted typ at 25c/3 v max at 85c/3.6 v 1.2 ma processor and peripheral currents arm ? cortex-m3, ram, and flash memory 25c, 1.8 v memory and 1.25 v core arm ? cortex-m3 running at 12 mhz from crystal oscillator radio and all peripherals off 8.0 ma arm ? cortex-m3, ram, and flash memory 25c, 1.8 v memory and 1.25 v core arm ? cortex-m3 running at 24 mhz from crystal oscillator radio and all peripherals off 9.0 ma arm ? cortex-m3, ram, and flash memory sleep current 25c, 1.8 v memory and 1.25 v core arm ? cortex-m3 clocked at 12 mhz from the crystal oscillator radio and all peripherals off 4.0 ma arm ? cortex-m3, ram, and flash memory sleep current 25c, 1.8 v memory and 1.25 v core arm ? cortex-m3 clocked at 6 mhz from the high frequency rc oscillator radio and all peripherals off 2.0 ma serial controller current for each controller at maximum data rate 0.2 ma general purpose timer current for each timer at maximum clock rate 0.1 ma table 8. dc electrical characteristics (continued) parameter conditions min. typ. max. unit
stm32w108cb, stm32w108hb electrical characteristics doc id 15851 rev 1 9/20 general purpose adc current at maximum sample rate, dma enabled 1.1 ma rx current radio receiver, mac, and baseband arm ? cortex-m3 sleeping 20.0 ma total rx current ( = i radio receiver, mac and baseband, cpu + i ram, and flash memory ) vdd_pads = 3.0 v, 25c, arm ? cortex-m3 running at 12 mhz 27.0 ma vdd_pads = 3.0 v, 25c, arm ? cortex-m3 running at 24 mhz 28.0 ma boost mode total rx current ( = i radio receiver, mac and baseband, cpu + i ram, and flash memory ) vdd_pads = 3.0 v, 25c, arm ? cortex-m3 running at 12 mhz 28.0 ma vdd_pads = 3.0 v, 25c, arm ? cortex-m3 running at 24 mhz 29.0 ma tx current radio transmitter, mac, and baseband 25c and 1.8 v core; max. power out (+3 dbm typical) arm ? cortex-m3 sleeping 26.0 ma total tx current ( = i radio transmitter, mac and baseband, cpu + i ram, and flash memory ) vdd_pads = 3.0 v, 25c; maximum power setting (+7dbm); arm ? cortex-m3 running at 24 mhz 40.0 ma vdd_pads = 3.0 v, 25c; +3dbm power setting; arm ? cortex-m3 running at 24 mhz 32.0 ma vdd_pads = 3.0 v, 25c; 0dbm power setting; arm ? cortex-m3 running at 24 mhz 29.5 ma vdd_pads = 3.0 v, 25c; minimum power setting; arm ? cortex-m3 running at 24 mhz 24.5 ma table 8. dc electrical characteristics (continued) parameter conditions min. typ. max. unit
electrical characteristics stm32w108cb, stm32w108hb 10/20 doc id 15851 rev 1 figure 4 shows the variation of current in transmit mode (with the arm ? cortex-m3 running at 24 mhz). figure 4. transmit power consumption figure 5 shows typical output power against power setting on the st reference design. figure 5. transmit output power
stm32w108cb, stm32w108hb electrical characteristics doc id 15851 rev 1 11/20 2.5 digital i/o specifications ta b l e 9 lists the digital i/o specifications for the stm32w. the digital i/o power (named vdd_pads) comes from three dedicated pins (pins 23, 28 and 37). the voltage applied to these pins sets the i/o voltage. table 9. digital i/o specifications parameter conditions min. typ. max. unit voltage supply (regulator input) vdd_pads 2.1 3.6 v low schmitt switching threshold v swil schmitt input threshold going from high to low 0.42 x vdd_pads 0.50 x vdd_pads v high schmitt switching threshold v swih schmitt input threshold going from low to high 0.62 x vdd_pads 0.80 x vdd_pads v input current for logic 0 i il -0.5 a a input current for logic 1 i ih +0.5 a a input pull-up resistor value r ipu 24 29 34 k input pull-down resistor value r ipd 24 29 34 k output voltage for logic 0 v ol (i ol = 4 ma for standard pads, 8 ma for high current pads) 0 0.18 x vdd_pads v output voltage for logic 1 v oh (i oh = 4 ma for standard pads, 8 ma for high current pads) 0.82 x vdd_pads vdd_pads v output source current (standard current pad) i ohs 4ma output sink current (standard current pad) i ols 4ma output source current high current pad: pa6, pa7, pb6, pb7, pc0 i ohh 8ma output sink current high current pad: pa6, pa7, pb6, pb7, pc0 i olh 8ma total output current (for i/o pads) i oh + i ol 40 ma input voltage threshold for osc32a 0.2 x vdd_pads 0.8 x vdd_pads v input voltage threshold for osca 0.2 x vdd_pads a 0.8 x vdd_pads a v
electrical characteristics stm32w108cb, stm32w108hb 12/20 doc id 15851 rev 1 2.6 non-rf system electrical characteristics ta b l e 1 0 lists the non-rf system level characteristics for the stm32w. 2.7 rf electrical characteristics 2.7.1 receive ta b l e 1 1 lists the key parameters of the integrated ieee 802.15.4 receiver on the stm32w. note: receive measurements were collected with st?s stm32w ceramic balun reference design (version a0) at 2440 mhz. the typical number indicates one standard deviation above the mean, measured at room temperature (25 c). the min and max numbers were measured over process corners at room temperature table 10. non-rf system electrical characteristics parameter conditions min. typ. max. unit system wake time from deep sleep from wakeup event to first arm ? cortex- m3 instruction running from 6mhz internal rc clock includes supply ramp time and oscillator startup time ?100? s shutdown time going into deep sleep from last arm ? cortex-m3 instruction to deep sleep mode ?5?s table 11. receive characteristics parameter conditions min. typ. max. unit frequency range 2400 2500 mhz sensitivity (boost mode) 1% per, 20 byte packet defined by ieee 802.15.4-2003 -100 -95 dbm sensitivity 1% per, 20 byte packet defined by ieee 802.15.4-2003 -99 -94 dbm high-side adjacent channel rejection ieee 802.15.4 signal at -82 dbm 35 db low-side adjacent channel rejection ieee 802.15.4 signal at -82 dbm 35 db 2 nd high-side adjacent channel rejection ieee 802.15.4 signal at -82 dbm 43 db 2 nd low-side adjacent channel rejection ieee 802.15.4 signal at -82 dbm 43 db channel rejection for all other channels ieee 802.15.4 signal at -82 dbm 40 db 802.11g rejection centered at +12 mhz or -13 mhz ieee 802.15.4 signal at -82 dbm 35 db maximum input signal level for correct operation 0dbm
stm32w108cb, stm32w108hb electrical characteristics doc id 15851 rev 1 13/20 2.7.2 transmit ta b l e 1 2 lists the key parameters of the integrated ieee 802.15.4 transmitter on the stm32w. note: transmit measurements were collected with st?s stm32w ceramic balun reference design (version a0) at 2440 mhz. the typical number indicates one standard deviation above the mean, measured at room temperature (25 c). the min and max numbers were measured over process corners at room temperature co-channel rejection ieee 802.15.4 signal at -82 dbm -6 dbc relative frequency error (2x40 ppm required by ieee 802.15.4) -120 +120 ppm relative timing error (2x40 ppm required by ieee 802.15.4) -120 +120 ppm linear rssi range as defined by ieee 802.15.4 40 db rssi range -90 -30 dbm table 11. receive characteristics (continued) parameter conditions min. typ. max. unit table 12. transmit characteristics parameter conditions min. typ. max. unit maximum output power (boost mode) at highest power setting 7 dbm maximum output power at highest power setting 0 3 dbm minimum output power at lowest power setting -32 dbm error vector magnitude as defined by ieee 802.15.4, which sets a 35% maximum 515% carrier frequency error -40 +40 ppm load impedance for optimum transmit power 200+j90 tbc ? psd mask relative 3.5 mhz away -20 db psd mask absolute 3.5 mhz away -30 dbm
electrical characteristics stm32w108cb, stm32w108hb 14/20 doc id 15851 rev 1 2.7.3 synthesizer ta b l e 1 3 lists the key parameters of the integrated synthesizer on the stm32w. table 13. synthesizer characteristics parameter conditions min. typ. max. unit frequency range 2400 2500 mhz frequency resolution 11.7 khz lock time from off, with correct vco dac setting 100 s s relock time channel change or rx/tx turnaround (ieee 802.15.4 defines 192 s turnaround s turnaround time) 100 s s phase noise at 100 khz offset -71 dbc/hz phase noise at 1 mhz offset -91 dbc/hz phase noise at 4 mhz offset -103 dbc/hz phase noise at 10 mhz offset -111 dbc/hz
stm32w108cb, stm32w108hb package characteristics doc id 15851 rev 1 15/20 3 package characteristics 3.1 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 6. vfqfpn48 7x7mm package outline s e a ting pl a ne c a 3 a1 a2 a ddd c pin no. 1 id r = 0.20 bottom view 1 4 8 e e l l 12 1 3 d2 b 24 25 b e2 3 6 3 7 e d v0_me
package characteristics stm32w108cb, stm32w108hb 16/20 doc id 15851 rev 1 table 14. vfqfpn48 7x7mm package mechanical data symbol millimeters inches (1) 1. values in inches are converted fr om mm and rounded to 4 decimal digits. min. typ. max. min. typ. max. a 0.800 0.900 1.000 0.0315 0.0354 0.0394 a1 0.020 0.050 0.0008 0.0020 a2 0.650 1.000 0.0256 0.0394 a3 0.250 0.0098 b 0.180 0.230 0.300 0.0071 0.0091 0.0118 d 6.850 7.000 7.150 0.2697 0.2756 0.2815 d2 2.250 4.700 5.250 0.0886 0.1850 0.2067 e 6.850 7.000 7.150 0.2697 0.2756 0.2815 e2 2.250 4.700 5.250 0.0886 0.1850 0.2067 e 0.450 0.500 0.550 0.0177 0.0197 0.0217 l 0.300 0.400 0.500 0.0118 0.0157 0.0197 ddd 0.080 0.0031
stm32w108cb, stm32w108hb package characteristics doc id 15851 rev 1 17/20 figure 7. qfn 40l 6x6mm pitch 0.5 package outline table 15. qfn 40l 6x6mm package mechanical data symbol millimeters inches (1) 1. values in inches are converted fr om mm and rounded to 4 decimal digits. min typ max min typ max a 0.800 0.900 1.000 0.0315 0.0354 0.0394 a1 0.020 0.050 0.0008 0.0020 a2 0.720 1.070 0.0283 0.0421 a3 0.200 0.0079 b 0.180 0.250 0.300 0.0071 0.0098 0.0118 d 5.900 6.000 6.100 0.2323 0.2362 0.2402 d2 4.500 4.550 4.700 0.1772 0.1791 0.1850 e 6.000 0.2362 e2 4.500 4.550 4.700 0.1772 0.1791 0.1850 e 0.500 0.0197 l 0.350 0.400 0.450 0.0138 0.0157 0.0177 ddd 0.080 0.0031 bottom view exposed pad top view pin 1 id pin 1 id zf_me
ordering information scheme stm32w108cb, stm32w108hb 18/20 doc id 15851 rev 1 4 ordering information scheme for a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest st sales office. example : stm32 w 108 c b u 6 x device family stm32 = arm-based 32-bit microcontroller product type w = wireless system-on-chip sub-family 108 = ieee 802.15.4 specification pin count h = 40 pins c = 48 pins code size b = 128 kbytes package u = qfn temperature range 6 = ?40 c to +85 c firmware version ?blank? = open platform 1 = ember zigbee stack 2 = st zigbee stack 3 = rf4ce stack 4 = ieee 802.15.4 media access control
stm32w108cb, stm32w108hb revision history doc id 15851 rev 1 19/20 5 revision history table 16. document revision history date revision changes 20-aug-2009 1 initial release.
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